Micronmesh for fault-tolerant GALS Multiprocessors on FPGA

H. Kariniemi, J. Nurmi
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引用次数: 5

Abstract

System-on-Chip (SoC) circuits have evolved to single chip Multiprocessor systems. Due to increasing variance of process parameters, which produces synchronization problems on large SoCs, a globally-asynchronous locally-synchronous (GALS) design style must have been mobilized. In addition, the large VLSI circuits are also becoming more susceptible to transient and intermittent faults which can corrupt their operation. This paper presents a new micronmesh network-on-chip (NoC) which is targeted to fault-tolerant communication of GALS Multiprocessor SoCs (MPSoC). It is fully synthesizable with current design tools and it can be used for prototyping MPSoCs on FPGA circuits. The Micronmesh incorporates a new improved fault-diagnosis-and-repair (FDAR) system which is able to diagnose and repair also buffer memories in addition to wire connections while fault-tolerant DOR (FTDOR) routing is used for routing packets to their destinations around defected parts. Owing to the FDAR system and the FTDOR Micronmesh degrades gracefully as permanent faults appear and it is able to recover from transient and intermittent faults. The fault-tolerance of the Micronmesh is also improved by switch-to-switch (S2S) level retransmissions which reduce the number of end-to-end (E2E) level retransmissions that produce considerably higher latencies. These methods targeted at improving the fault-tolerance are also becoming necessary for improving the manufacturability of the circuits in the future.
FPGA上容错GALS多处理器微网格
片上系统(SoC)电路已经发展到单芯片多处理器系统。由于过程参数的变化越来越大,在大型soc中会产生同步问题,因此必须采用全局异步局部同步(GALS)设计风格。此外,大型VLSI电路也变得更容易受到瞬态和间歇性故障的影响,这可能会破坏其运行。针对GALS多处理器soc (MPSoC)的容错通信问题,提出了一种新的微孔片上网络(NoC)。它可以与当前的设计工具完全合成,并且可以用于FPGA电路上的mpsoc原型设计。微网集成了一个新的改进的故障诊断和修复(FDAR)系统,除了电线连接之外,还能够诊断和修复缓冲存储器,而容错DOR (FTDOR)路由用于将数据包路由到有缺陷部件周围的目的地。由于FDAR系统和FTDOR微网在出现永久性故障时能够优雅地退化,并且能够从瞬态和间歇性故障中恢复。通过交换机到交换机(S2S)级别的重传,微孔网的容错性也得到了提高,这种重传减少了端到端(E2E)级别重传的数量,从而产生了相当高的延迟。这些以提高容错性为目标的方法在未来也成为提高电路可制造性的必要条件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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