Transconductance/drain current based distortion analysis for analog CMOS integrated circuits

J. Ou, F. Farahmand
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引用次数: 9

Abstract

This paper proposes a technique to analyze distortion in analog CMOS integrated circuits. The proposed technique captures a transistor's nonlinearity using a two-dimensional Taylor series with coefficients that depend on the transconductance-to-current ratio (gm/ID) of a transistor. To explore the effectiveness of the proposed technique, a common-source amplifier is designed. The harmonics of the amplifier are calculated using both the gm/ID technique and Cadence's periodic steady state (PSS) analysis over a wide range of gm/ID. The results indicate a close match (i.e. a discrepancy less than 2 dB from gm/ID=8 to 30) and show that the proposed technique can indeed be incorporated in a gm/ID design flow.
基于跨导/漏极电流的模拟CMOS集成电路畸变分析
本文提出了一种分析模拟CMOS集成电路畸变的方法。所提出的技术利用二维泰勒级数来捕捉晶体管的非线性,泰勒级数的系数取决于晶体管的跨导电流比(gm/ID)。为了探索该技术的有效性,设计了一个共源放大器。利用gm/ID技术和Cadence的周期稳态(PSS)分析计算放大器的谐波。结果表明了一个紧密的匹配(即从gm/ID=8到30的差异小于2 dB),并表明所提出的技术确实可以纳入gm/ID设计流程。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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