Schrödinger-Poisson and Monte Carlo analysis of III–V MOSFETs for high frequency and low consumption applications

Abstract

III–V MOSFET (Metal Oxide Semiconductor Field Effect Transistor) with high-κ gate dielectric stack appears as a viable alternative to enhance not only microwave performance but also logic circuits with low supply voltage. This allows fulfilling high-speed and low-power specifications for intelligent applications. Indeed, combining weak gate leakage of standard MOSFETs and good RF performance of HEMTs (High Electron Mobility Transistors), they could outperform end-of-roadmap standard Si-MOSFET. Using full 2D Poisson-Schrödinger solver and a semi-classical Ensemble Monte Carlo device simulator, various 50nm MOSFET and HEMT are investigated in terms of gate charge control and both static and dynamic I–V performance. In particular, Y parameters are carefully extracted from time-varying currents. This comparative study allows us to propose an optimized III–V nano-FET architecture with high-frequency performance under low power supply.