Current Compliance-Free Resistive Switching in Nonstoichiometric CeOx Films for Nonvolatile Memory Application

2009 IEEE International Memory Workshop Pub Date : 2009-05-10 DOI:10.1109/IMW.2009.5090586

L. Liu, X. Sun, B. Sun, J. Kang, Y. Wang, X. Liu, R. Han, G. Xiong

引用次数: 7

Abstract

The RS behaviors of stoichiometric and nonstoichiometric CeOx films were studied. Current compliance-free resistive switching was achieved in the nonstoichiometric CeOx film, which are helpful to remove the limitation of current compliance to simplify RRAM circuits design.

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用于非易失性存储器的非化学计量CeOx薄膜中的无电流顺应性电阻开关

研究了化学计量和非化学计量氧化铈薄膜的RS行为。在非化学计量CeOx薄膜上实现了无电流顺应性的电阻开关，有助于消除电流顺应性的限制，简化RRAM电路的设计。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2009 IEEE International Memory Workshop

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