Electromagnetic Susceptibility and Nonlinearity of Voltage Reference

Z. An, Z. Han, J. Wu, L. Yu, B. Li, W. Zhao, B. Lu, J. Gao, S. Wei, J. Luo
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Abstract

This paper studies the relationship between nonlinearity and electromagnetic susceptibility (EMS) of integrated circuits (ICs). The research object is a voltage reference circuit with two similar architectures. Experiments results show that direct current (DC) shift appeared on the output in the presence of an electromagnetic disturbance on the ground plane and the small difference in architecture resulted in significant differences in EMS. Since the nonlinearity of the circuit, the “gain” of the circuit is constantly changing in the presence of an electromagnetic disturbance. As a result, asymmetric fluctuations are generated on the output, which means DC shift is generated. Different architectures mean different nonlinearity. It can be concluded that the DC shift generated in the presence of electromagnetic disturbance is the result of the nonlinearity of ICs. The stronger the nonlinearity, the easier it is to generate DC shift. Increasing the linearity of ICs can not only improve the electrical characteristics but also decrease the EMS.
参考电压的电磁磁化率和非线性
研究了集成电路的非线性与电磁磁化率之间的关系。研究对象是具有两个相似结构的电压基准电路。实验结果表明,在地平面存在电磁干扰的情况下,输出端会出现直流位移,结构的微小差异导致了EMS的显著差异。由于电路的非线性,在存在电磁干扰时,电路的“增益”是不断变化的。因此,在输出端产生不对称波动,即产生直流移位。不同的架构意味着不同的非线性。可以得出结论,在电磁干扰下产生的直流位移是集成电路非线性的结果。非线性越强,越容易产生直流移位。提高集成电路的线性度不仅可以改善其电气特性,还可以降低其电磁干扰。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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