A sub-1V, 2.8dB NF, 475µW coupled LNA for internet of things employing dual-path noise and nonlinearity cancellation

Mustafijur Rahman, R. Harjani
{"title":"A sub-1V, 2.8dB NF, 475µW coupled LNA for internet of things employing dual-path noise and nonlinearity cancellation","authors":"Mustafijur Rahman, R. Harjani","doi":"10.1109/RFIC.2017.7969061","DOIUrl":null,"url":null,"abstract":"A 0.7V low power LNA combines a 1∶3 frontend balun with dual-path noise and non-linearity cancellation for improved noise performance at low power. In traditional techniques only the noise of the main path is cancelled while the noise of the auxiliary path is minimized by using high power. In the proposed design, the noise and non-linearity of both the main and the auxiliary paths are mutually cancelled allowing for low power operation. The 2.8dB NF, −10.7dBm IIP3 LNA in TSMC's 65nm GP process consumes 475µW of power resulting in an FOM of 28.8dB which is 8.2dB better than the state of the art.","PeriodicalId":349922,"journal":{"name":"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2017.7969061","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10

Abstract

A 0.7V low power LNA combines a 1∶3 frontend balun with dual-path noise and non-linearity cancellation for improved noise performance at low power. In traditional techniques only the noise of the main path is cancelled while the noise of the auxiliary path is minimized by using high power. In the proposed design, the noise and non-linearity of both the main and the auxiliary paths are mutually cancelled allowing for low power operation. The 2.8dB NF, −10.7dBm IIP3 LNA in TSMC's 65nm GP process consumes 475µW of power resulting in an FOM of 28.8dB which is 8.2dB better than the state of the art.
一种超低电压、2.8dB NF、475µW耦合物联网LNA,采用双路噪声和非线性消除
0.7V低功耗LNA采用1∶3前端平衡电路,具有双路噪声和非线性消除功能,可提高低功耗噪声性能。在传统的技术中,只消除主路的噪声,而利用高功率将辅助路的噪声降至最低。在提出的设计中,噪声和非线性的主路径和辅助路径相互抵消,允许低功耗运行。台积电65nm GP制程的2.8dB NF,−10.7dBm IIP3 LNA功耗为475 μ W,导致FOM为28.8dB,比目前的技术水平高8.2dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信