First experimental observation of channel thickness scaling (down to 3 nm) induced mobility enhancement in UTB GeOI nMOSFETs

Abstract

Electron mobility of ultra thin body (UTB) GeOI «MOSFETs with body thickness (Tbody) down to 3 nm has been systematically investigated and significant mobility enhancement with decreasing Tbody has been observed for the first time. This channel thickness scaling induced mobility enhancement can be attributed to the unique physical property of ultra thin Ge where the electron effective mass reduces with scaling Tbody through the band structure modification.