A low phase noise 0.9 / 1.8 GHz dual-band LC VCO in 0.18 μm CMOS technology

Jinhyun Kim, Jeongsoo Park, Jeong‐Geun Kim
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引用次数: 3

Abstract

This paper presents a low phase noise dual-band LC voltage controlled oscillator (VCO) in 0.18 ßm CMOS technology. The proposed CMOS LC VCO is realized employing varactor diodes, a switched capacitor array and a switched differential inductor, which operates the dual-band operation. The CMOS LC VCO is also implemented with low phase noise performance using two series inductors at common source nodes. The measured phase noises at 0.9 GHz and 1.8 GHz frequency bands are −135 dBc/Hz and − 126 dBc/Hz at 1 MHz offset. The chip size is 1.3×1.4 mm2, including pads.
采用0.18 μm CMOS技术的低相位噪声0.9 / 1.8 GHz双频LC压控振荡器
本文提出了一种采用0.18 ßm CMOS技术的低相位噪声双带LC压控振荡器(VCO)。本文提出的CMOS LC压控振荡器采用变容二极管、开关电容阵列和开关差动电感实现双频段工作。该CMOS LC压控振荡器在共源节点采用两个串联电感器,实现了低相位噪声性能。在偏移1mhz时,0.9 GHz和1.8 GHz频段的相位噪声分别为- 135 dBc/Hz和- 126 dBc/Hz。芯片尺寸为1.3×1.4 mm2,包括衬垫。
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