Modelling the memristor at functional level by using homotopy methods

Abstract

The nanometric memristor has emerged as an important device that foresees novel features for analogue and digital systems. As an immediate consequence, there is a strong need for smart models of the memristor that not only handle the Physics of the device but that also result of application for electric circuit simulation. The ultimate goal is to allow the memristor to be incorporated to the design path of hybrid circuits, i.e. circuits that contain traditional devices and memristors. In this work, a memristor model is obtained by solving the differential equation, that governs the physical behaviour, with a special class of homotopy method. The final model is shaped in a closed-form that can be used at functional level for simulation purpouses.