A 176×120 pixel CMOS vision chip for Gaussian filtering with massivelly Parallel CDS and A/D-conversion

Manuel Suárez-Cambre, V. Brea, D. Cabello, J. Fernández-Berni, R. Carmona-Galán, Á. Rodríguez-Vázquez
{"title":"A 176×120 pixel CMOS vision chip for Gaussian filtering with massivelly Parallel CDS and A/D-conversion","authors":"Manuel Suárez-Cambre, V. Brea, D. Cabello, J. Fernández-Berni, R. Carmona-Galán, Á. Rodríguez-Vázquez","doi":"10.1109/ECCTD.2013.6662293","DOIUrl":null,"url":null,"abstract":"This paper conveys a proof-of-concept chip for Gaussian pyramid generation for image feature detectors. Gaussian filtering and image resizing are performed with a switched-capacitor (SC) network. The chip is conceived as the mapping of a CMOS-3D architecture for feature detectors onto a conventional technology, with some functionality removed, and the corresponding area overhead with respect to that of a CMOS-3D architecture, but preserving masivelly parallel Correlated Double Sampling (CDS) and A/D conversion. The chip has been fabricated on a die of 5×5 mm2 with 0.18 μm CMOS technology, achieving an array of 176×120 sensing elements (pixels). The pixels are arranged in Processing Elements (PEs). Every PE comprises four photodiodes, four SC nodes, one CDS circuit, and local circuitry for one ADC. Every PE occupies an area of 44×44 μm2. The chip senses an image and computes the Gaussian pyramid with an average power consumption lower than 75 nW/pixel at 30 frames/s.","PeriodicalId":342333,"journal":{"name":"2013 European Conference on Circuit Theory and Design (ECCTD)","volume":"73 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 European Conference on Circuit Theory and Design (ECCTD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECCTD.2013.6662293","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

Abstract

This paper conveys a proof-of-concept chip for Gaussian pyramid generation for image feature detectors. Gaussian filtering and image resizing are performed with a switched-capacitor (SC) network. The chip is conceived as the mapping of a CMOS-3D architecture for feature detectors onto a conventional technology, with some functionality removed, and the corresponding area overhead with respect to that of a CMOS-3D architecture, but preserving masivelly parallel Correlated Double Sampling (CDS) and A/D conversion. The chip has been fabricated on a die of 5×5 mm2 with 0.18 μm CMOS technology, achieving an array of 176×120 sensing elements (pixels). The pixels are arranged in Processing Elements (PEs). Every PE comprises four photodiodes, four SC nodes, one CDS circuit, and local circuitry for one ADC. Every PE occupies an area of 44×44 μm2. The chip senses an image and computes the Gaussian pyramid with an average power consumption lower than 75 nW/pixel at 30 frames/s.
一种176×120像素CMOS视觉芯片,用于高斯滤波,具有大规模并行CDS和A/ d转换
本文介绍了一种用于图像特征检测器高斯金字塔生成的概念验证芯片。采用切换电容(SC)网络实现高斯滤波和图像大小调整。该芯片被认为是将用于特征检测器的CMOS-3D架构映射到传统技术上,删除了一些功能,并且相对于CMOS-3D架构的相应面积开销,但保留了大量并行相关双采样(CDS)和a /D转换。该芯片采用0.18 μm CMOS技术,在5×5 mm2的芯片上制造,实现了176×120传感元件(像素)阵列。像素排列在处理元素(PEs)中。每个PE由四个光电二极管、四个SC节点、一个CDS电路和一个ADC的本地电路组成。每个PE的面积为44×44 μm2。该芯片感知图像并计算高斯金字塔,在30帧/秒的速度下,平均功耗低于75 nW/像素。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信