A novel algorithm for the solution of charge transport equations in MANOS devices including charge trapping in alumina and temperature effects

Abstract

We present a new algorithm for the exact solution of the system of equations describing charge trapping and transport across the dielectric stack of nitride-based charge trapping memories. The algorithm is implemented in a physical MANOS model accounting for temperature effects and charge trapping into the Al2O3 blocking layer. The model reproduces threshold voltage shifts measured at different temperatures on different MANOS stacks.