Towards a viable TDDB reliability assessment methodology: From breakdown physics to circuit failure

Abstract

In this paper, the advances in the understanding of breakdown statistics and physics of the so-called first breakdown (BD) phenomena are presented. Then the recent findings on post-breakdown effects and the impact of oxide BD on device failure and circuit functionality are reviewed. With this state-of-the-art understanding of the first BD methodology and post-BD methodologies, a robust reliability projection methodology can be developed for SiO2-based dielectrics which covers a wide range of oxide thicknesses and applied voltages. Furthermore, these advances will allow the development of a viable circuit-level reliability assessment methodology from basic breakdown physics.