{"title":"Mechanism B I-V Symmetry for MIM Capacitors Used in Microelectronics","authors":"W. Lau","doi":"10.1109/CSTIC52283.2021.9461463","DOIUrl":null,"url":null,"abstract":"The I-V characteristics of MIM capacitors tend to be asymmetrical. However, the I-V characteristics of MIM capacitors can sometimes be symmetrical because of two different mechanisms: Mechanism A and Mechanism B. For high-k MIM capacitors with ultrathin high-k dielectric, Mechanism B is the more likely mechanism.","PeriodicalId":186529,"journal":{"name":"2021 China Semiconductor Technology International Conference (CSTIC)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 China Semiconductor Technology International Conference (CSTIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSTIC52283.2021.9461463","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
The I-V characteristics of MIM capacitors tend to be asymmetrical. However, the I-V characteristics of MIM capacitors can sometimes be symmetrical because of two different mechanisms: Mechanism A and Mechanism B. For high-k MIM capacitors with ultrathin high-k dielectric, Mechanism B is the more likely mechanism.