A reliable TDDB lifetime Projection model for advanced gate stack

2013 IEEE International Integrated Reliability Workshop Final Report Pub Date : 2013-10-01 DOI:10.1109/IIRW.2013.6804169

S. C. Chen, C. L. Chen, Y. Lee, S. W. Chang, J. Shih, Y. Lee, D. Maji, K. Wu

引用次数: 7

Abstract

In this paper, a reliable TDDB lifetime projection by modeling the gate leakage current degradation is proposed. The validity of model is demonstrated by the good agreements with the experimental results. The two-stage Ig degradation and voltage-dependent Weibull slope are explained through the associated trap generation during the TDDB stress. Based on this model., accurate TDDB lifetime prediction can be achieved for HK/IL gate stack.

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一种可靠的高级栅极堆TDDB寿命投影模型

本文提出了一种基于栅极漏电流退化模型的可靠的TDDB寿命预测方法。模型与实验结果吻合较好，证明了模型的有效性。通过在TDDB应力过程中产生的相关陷阱来解释两阶段的Ig降解和电压依赖的威布尔斜率。基于这个模型。，可以对HK/IL栅极堆栈实现精确的TDDB寿命预测。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2013 IEEE International Integrated Reliability Workshop Final Report

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