Heterogeneous integration of MEMS sensor array and CMOS readout IC with Through Silicon Via interconnects

Qian Wang, S. Xie, Tao Wang, Jian Cai, Ziyu Liu, Dong Wu, Mengyun Yue, Zheyao Wang, Shuidi Wang, Songliang Jia
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引用次数: 1

Abstract

Through Silicon Via (TSV) forms electrical feedthrough and makes it possible to vertically stack chips with various functions which including logic, memory, analog and MEMS etc. This paper presents a TSV 3D- heterogeneous integration structure of MEMS sensor array with CMOS readout IC (ROIC) and its fabrication technology. Surface micromaching of sensor array are co-designed with TSV fabrication processes to enable TSVs for electrical signals output from backside in sensor chip, sensor chip and its corresponding ROIC chip are vertically stacked, and chip to chip interconnection is achieved by Cu/Sn-Cu microbump bonding. The stacked structure are then assembled to relized MEMS-CMOS 3D heterogeneous integration. Overall, the present work describes an approach for high density MEMS integration.
通过硅孔互连的MEMS传感器阵列和CMOS读出集成电路的异构集成
通过硅孔(TSV)形成电馈通,使具有各种功能的芯片垂直堆叠成为可能,包括逻辑,内存,模拟和MEMS等。提出了一种带有CMOS读出IC (ROIC)的MEMS传感器阵列的TSV三维异构集成结构及其制造工艺。传感器阵列的表面微加工与TSV制造工艺协同设计,使TSV从传感器芯片背面输出电信号,传感器芯片与其对应的ROIC芯片垂直堆叠,并通过Cu/Sn-Cu微碰撞键合实现芯片间互连。然后组装堆叠结构,实现MEMS-CMOS三维异构集成。总的来说,本工作描述了一种高密度MEMS集成的方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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