{"title":"Design of a Low-Power High-Rate Ultra-Wideband Modulator for 5.8-10.6 GHz","authors":"M. Salehi, A. Nabavi, N. Ghadimi","doi":"10.1109/ICM.2006.373278","DOIUrl":null,"url":null,"abstract":"A pulse modulator for ultra-wideband (UWB) transmitters is designed and simulated using 0.13-mum CMOS technology. 8-GHz carrier frequency is modulated into pulses with Gaussian envelope and 1-ns time-width to push the spectrum to 5.8-10.6-GHz band, and to satisfy FCC mask. By using 2-ns pulse-width, it is also possible to utilize the modulator at two sub-bands of 6-8 GHz and 8-10 GHz. The transmitter is low power since it employs a digital structure, and also supports high data rates due to using I/Q modulation. The architecture of modulator consists of Johnson counter, multiplier, current adder, and RF mixer. The key element in the design is ETSPC flip flops that fulfill high-speed and low-power requirements in precision timing. The power-speed trade-off is optimized by decreasing the size of the FFs, and using direct conversion structure for RF mixer. The power consumption of the modulator from 1.2-V power supply is as low as 4.5 mW for the rate of 2 Gchip/s at 8-GHz center frequency.","PeriodicalId":284717,"journal":{"name":"2006 International Conference on Microelectronics","volume":"118 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 International Conference on Microelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICM.2006.373278","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A pulse modulator for ultra-wideband (UWB) transmitters is designed and simulated using 0.13-mum CMOS technology. 8-GHz carrier frequency is modulated into pulses with Gaussian envelope and 1-ns time-width to push the spectrum to 5.8-10.6-GHz band, and to satisfy FCC mask. By using 2-ns pulse-width, it is also possible to utilize the modulator at two sub-bands of 6-8 GHz and 8-10 GHz. The transmitter is low power since it employs a digital structure, and also supports high data rates due to using I/Q modulation. The architecture of modulator consists of Johnson counter, multiplier, current adder, and RF mixer. The key element in the design is ETSPC flip flops that fulfill high-speed and low-power requirements in precision timing. The power-speed trade-off is optimized by decreasing the size of the FFs, and using direct conversion structure for RF mixer. The power consumption of the modulator from 1.2-V power supply is as low as 4.5 mW for the rate of 2 Gchip/s at 8-GHz center frequency.