A high performance V-band monolithic quadruple sub-harmonic mixer

Won-Young Uhm, W. Sul, Hyo-Jong Han, Sungchan Kim, H. Lee, D. An, Sam-Dong Kim, D. Shin, Hyung‐Moo Park, J. Rhee
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引用次数: 11

Abstract

In this paper, we present a high performance V-band quadruple sub-harmonic mixer monolithic circuit which is designed and fabricated for the millimeter wave down converter applications. While the typical sub-harmonic mixers use a half of fundamental frequency, we adopt a quarter of the fundamental frequency. The proposed circuit is based on sub-harmonic mixer with APDP (anti parallel diode pair). Upon the typical mixer design, additional stubs are placed with the modification of original stub length. And the 0.1 /spl mu/m pseudomorphic high electron mobility transistors (PHEMTs) providing better gain are positioned to each port. Used lumped elements at IF port, it provides selectivity of IF frequency, and increases isolation. Maximum conversion gain of 0.8 dB at a LO frequency of 14.5 GHz and at a RF frequency of 60.4 GHz is measured. Both LO-to-RF and LO-to-IF isolations are higher than 40 dB. These conversion gain results and isolation characteristic are the best performances reported among the quadruple sub-harmonic mixers operating in the V-band millimeter wave frequency thus far.
高性能v波段单片四重次谐波混频器
本文提出了一种用于毫米波下变频的高性能v波段四次谐波混频器单片电路。典型的次谐波混频器使用一半的基频,而我们采用四分之一的基频。该电路基于亚谐波混频器和APDP(反并联二极管对)。在典型的混合器设计中,附加的短节被放置在原有短节长度的基础上。提供更好增益的0.1 /spl mu/m伪晶高电子迁移率晶体管(phemt)被定位到每个端口。在中频端口使用集总元件,它提供了中频的选择性,并增加了隔离。在本端频率为14.5 GHz,射频频率为60.4 GHz时,最大转换增益为0.8 dB。低电平对射频和低电平对中频的隔离度均高于40 dB。这些转换增益结果和隔离特性是迄今为止报道的工作在v波段毫米波频率上的四重次谐波混频器中表现最好的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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