A manufacturable high-k MIM dielectric with outstanding reliability and voltage linearity for RF and mixed-signal technologies

Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004. Pub Date : 2004-09-08 DOI:10.1109/SMIC.2004.1398166

K. Vaed, E. Eshun, R. Bolam, K. Stein, D. Coolbaugh, D. Ahlgren, J. Dunn

引用次数: 3

Abstract

We demonstrate the simultaneous optimization of 100,000 POH reliability and voltage linearity (<40 ppm/V) for a high-k MIM dielectric (4.5 fF/m/sup 2/) that is both Al and Cu BEOL compatible. Also, we discuss the scaling of dielectric films to achieve excellent bias linearity, while attaining a capacitance density of 7.2 fF/m/sup 2/.

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一种可制造的高k MIM电介质，具有出色的可靠性和电压线性度，适用于射频和混合信号技术

我们展示了同时优化100,000 POH可靠性和电压线性度(<40 ppm/V)的高k MIM介电介质(4.5 fF/m/sup 2/)，同时兼容Al和Cu BEOL。此外，我们还讨论了介电膜的缩放以获得优异的偏置线性，同时获得7.2 fF/m/sup /的电容密度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.

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