A 24-GHz and 60-GHz dual-band standing-wave VCO in 0.13µm CMOS process

Liang Wu, A. Ng, L. Leung, H. Luong
{"title":"A 24-GHz and 60-GHz dual-band standing-wave VCO in 0.13µm CMOS process","authors":"Liang Wu, A. Ng, L. Leung, H. Luong","doi":"10.1109/RFIC.2010.5477265","DOIUrl":null,"url":null,"abstract":"By exploiting the intrinsic multiple oscillation modes of a standing-wave oscillator, a dual-band millimeter-wave VCO is designed. Implemented in 0.13µm CMOS with an area of 0.05mm2, the VCO prototype measures a dual-band operation at 24 GHz and 60 GHz with tuning range of 10.8% and 7.2%, phase noise of −120dBc/Hz and −114dBc/Hz at 10MHz offset, power consumption of 11mW and 24mW, corresponding to FoM of −177dB and −176dB, respectively.","PeriodicalId":269027,"journal":{"name":"2010 IEEE Radio Frequency Integrated Circuits Symposium","volume":"86 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"17","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE Radio Frequency Integrated Circuits Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2010.5477265","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 17

Abstract

By exploiting the intrinsic multiple oscillation modes of a standing-wave oscillator, a dual-band millimeter-wave VCO is designed. Implemented in 0.13µm CMOS with an area of 0.05mm2, the VCO prototype measures a dual-band operation at 24 GHz and 60 GHz with tuning range of 10.8% and 7.2%, phase noise of −120dBc/Hz and −114dBc/Hz at 10MHz offset, power consumption of 11mW and 24mW, corresponding to FoM of −177dB and −176dB, respectively.
采用0.13µm CMOS工艺的24 ghz和60 ghz双频驻波压控振荡器
利用驻波振荡器固有的多振荡模式,设计了一种双频毫米波压控振荡器。该VCO样机采用面积为0.05mm2的0.13µm CMOS实现,在24 GHz和60 GHz下实现双频工作,调谐范围为10.8%和7.2%,在10MHz偏置时相位噪声为- 120dBc/Hz和- 114dBc/Hz,功耗为11mW和24mW,对应的FoM分别为- 177dB和- 176dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信