A Highly Robust, Low Delay and DNU-Recovery Latch Design for Nanoscale CMOS Technology

Abstract

With the advancement of semiconductor technologies, nano-scale CMOS circuits have become more vulnerable to soft errors, such as single-node-upsets (SNUs) and double-node-upsets (DNUs). In order to effectively tolerate DNUs caused by radiation and reduce the delay and area consumption of latches, this paper proposes a DNU resilient latch in the nanoscale CMOS technology. The latch mainly comprises four input-split inverters and four 2-input C-elements. Since all internal nodes are interlocked, the latch can recover from all possible DNUs. Simulation results show that, compared with the state-of-the-art DNU self-recovery latch designs, the proposed latch can save 64.51% transmission delay and 56.88% delay-area-power-product (DAPP) on average, respectively.