Analysis of process variations' impact on a 2.4 GHz 90 nm CMOS LNA

2013 IEEE 4th Latin American Symposium on Circuits and Systems (LASCAS) Pub Date : 2013-05-23 DOI:10.1109/LASCAS.2013.6519087

J. L. G. Rios, J. C. Cruz, D. Vázquez, A. Rueda

引用次数: 2

Abstract

This work presents the analysis of a 90 nm CMOS LNA under process variations. The main parameters charactering the performance of this kind of devices are analyzed. It shows how the performance degradation is mainly derived from the resonant frequency shifting due to the output matching passive network. A way to partially compensate the degradation is presented. Preliminary results are shown.

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工艺变化对2.4 GHz 90 nm CMOS LNA的影响分析

这项工作提出了90纳米CMOS LNA在工艺变化下的分析。分析了表征该类器件性能的主要参数。结果表明，输出匹配无源网络引起的谐振频移是导致性能下降的主要原因。提出了一种部分补偿退化的方法。初步结果显示。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2013 IEEE 4th Latin American Symposium on Circuits and Systems (LASCAS)

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