Static and dynamic characteristics of a 1100 V, double-implanted, planar, 4H-SiC PiN rectifier

Abstract

Implanted, high-voltage, planar junction rectifiers in 4H-SiC are fabricated using a deep boron implanted junction along with a shallow heavily doped layer created by co-implantation of aluminum and carbon. The fabricated junctions can block up to about 1100 V with low forward drop and low leakage current. The static and dynamic characteristics of these rectifiers have been investigated at both room temperature and high temperature.