{"title":"A Level Set simulator for nanooxidation using non-contact atomic force microscopy","authors":"L. Filipovic, S. Selberherr","doi":"10.1109/SISPAD.2011.6035031","DOIUrl":null,"url":null,"abstract":"Atomic force microscopy (AFM) can be used as a lithographic technique capable of manufacturing nanometer-sized devices. A simulator for AFM, implemented in a Level Set environment, is presented. The simulator uses empirical models to deduce the shape of a desired nanodot based on the applied voltage, pulse time, and ambient humidity. The shape of an AFM nanowire depends on the same factors as the shape of the nanodot in addition to the wire's orientation with respect to the (010) direction. An advantage of the presented approach is the ease with which further processing steps can be simulated in the same environment. Sample oxide nanodots and nanowires are analyzed, showing the ability of the process to generate nanometer sized structures.","PeriodicalId":264913,"journal":{"name":"2011 International Conference on Simulation of Semiconductor Processes and Devices","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 International Conference on Simulation of Semiconductor Processes and Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2011.6035031","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Atomic force microscopy (AFM) can be used as a lithographic technique capable of manufacturing nanometer-sized devices. A simulator for AFM, implemented in a Level Set environment, is presented. The simulator uses empirical models to deduce the shape of a desired nanodot based on the applied voltage, pulse time, and ambient humidity. The shape of an AFM nanowire depends on the same factors as the shape of the nanodot in addition to the wire's orientation with respect to the (010) direction. An advantage of the presented approach is the ease with which further processing steps can be simulated in the same environment. Sample oxide nanodots and nanowires are analyzed, showing the ability of the process to generate nanometer sized structures.