Current contours based IMN design methodology for broadband GaN Doherty power amplifiers

K. Patel, H. Golestaneh, S. Boumaiza
{"title":"Current contours based IMN design methodology for broadband GaN Doherty power amplifiers","authors":"K. Patel, H. Golestaneh, S. Boumaiza","doi":"10.1109/CSICS.2017.8240470","DOIUrl":null,"url":null,"abstract":"This paper proposes a design methodology based off the novel concept of current contours to insure proper current profiles for the main and peaking transistors needed to satisfy the load modulation conditions in a Doherty power amplifier over a wide frequency range. Utilizing this technique allows the construction of input matching networks that maximize the efficiency enhancement and linearity of the DPA. As a proof-of-concept, a 12 W DPA was designed. From 2.7 GHz to 4.7 GHz, continuous wave measurements have shown efficiency levels of greater than 37 % at 6 dB output power back-off and peak power. A gain of at least 8 db was shown with output power ranging from 40.7 dBm ±1 dB. Under an 80 MHz carrier aggregated signal, modulated signal results showed good linearizability with an ACLR of −48 dBc/Hz after digital pre-distortion.","PeriodicalId":129729,"journal":{"name":"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2017.8240470","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

This paper proposes a design methodology based off the novel concept of current contours to insure proper current profiles for the main and peaking transistors needed to satisfy the load modulation conditions in a Doherty power amplifier over a wide frequency range. Utilizing this technique allows the construction of input matching networks that maximize the efficiency enhancement and linearity of the DPA. As a proof-of-concept, a 12 W DPA was designed. From 2.7 GHz to 4.7 GHz, continuous wave measurements have shown efficiency levels of greater than 37 % at 6 dB output power back-off and peak power. A gain of at least 8 db was shown with output power ranging from 40.7 dBm ±1 dB. Under an 80 MHz carrier aggregated signal, modulated signal results showed good linearizability with an ACLR of −48 dBc/Hz after digital pre-distortion.
基于电流轮廓的宽带GaN Doherty功率放大器IMN设计方法
本文提出了一种基于电流轮廓新概念的设计方法,以确保在宽频率范围内满足多尔蒂功率放大器负载调制条件所需的主晶体管和峰值晶体管的适当电流分布。利用这种技术可以构建输入匹配网络,最大限度地提高DPA的效率和线性度。作为概念验证,设计了一个12w DPA。从2.7 GHz到4.7 GHz,连续波测量显示,在6 dB输出功率和峰值功率下,效率水平大于37%。输出功率范围为40.7 dBm±1 db,增益至少为8 db。在80 MHz载波聚合信号下,经过数字预失真处理的调制信号具有良好的线性化性能,ACLR为−48 dBc/Hz。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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