{"title":"Future performance challenges in nanometer design","authors":"D. Sylvester, Himanshu Kaul","doi":"10.1145/378239.378245","DOIUrl":null,"url":null,"abstract":"We highlight several fundamental challenges to designing high-performance integrated circuits in nanometer-scale technologies (i.e. drawn feature sizes <100 nm). Dynamic power scaling trends lead to major packaging problems. To alleviate these concerns, thermal monitoring and feedback mechanisms can limit worst-case dissipation and reduce costs. Furthermore, a flexible multi-V/sub dd/+multi-V/sub th/+re-sizing approach is advocated to leverage the inherent properties of ultrasmall MOSFETs and limit both dynamic and static power. Alternative global signaling strategies such as differential and low-swing drivers are recommended in order to curb the power requirements of cross-chip communication. Finally, potential power delivery challenges are addressed with respect to ITRS packaging predictions.","PeriodicalId":154316,"journal":{"name":"Proceedings of the 38th Design Automation Conference (IEEE Cat. No.01CH37232)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"53","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 38th Design Automation Conference (IEEE Cat. No.01CH37232)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1145/378239.378245","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 53
Abstract
We highlight several fundamental challenges to designing high-performance integrated circuits in nanometer-scale technologies (i.e. drawn feature sizes <100 nm). Dynamic power scaling trends lead to major packaging problems. To alleviate these concerns, thermal monitoring and feedback mechanisms can limit worst-case dissipation and reduce costs. Furthermore, a flexible multi-V/sub dd/+multi-V/sub th/+re-sizing approach is advocated to leverage the inherent properties of ultrasmall MOSFETs and limit both dynamic and static power. Alternative global signaling strategies such as differential and low-swing drivers are recommended in order to curb the power requirements of cross-chip communication. Finally, potential power delivery challenges are addressed with respect to ITRS packaging predictions.