A 17.8 dBm 110–130 GHz Power Amplifier and doubler chain in SiGe BiCMOS technology

Abstract

A D-Band ×2 frequency multiplier-amplifier chain implemented in a fT/fMAX = 250/330 GHz 0.12 μm SiGe BiCMOS technology is presented. The chain achieves a peak output power of 17.8 dBm at 115 GHz and consists of input balun and push-push frequency doubler which drives a balanced three stages Power Amplifier (PA). It operates from 110 GHz to 130 GHz (3 dB power bandwidth) with -2 dBm input power at V-Band and consumes a total DC power of 600 mW. The PA achieves output 1 dB compression point and saturated power of 13.5 and 17.6 dBm, respectively, at 120 GHz and peak small signal gain of 32 dB.