A study of analog characteristics of CMOS with heavily nitrided NO oxynitrides

2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184) Pub Date : 2001-06-12 DOI:10.1109/VLSIT.2001.934964

T. Ohguro, T. Nagano, M. Fujiwara, M. Takayanagi, T. Shimizu, H. Momose, S. Nakamura, Y. Toyoshima

引用次数: 14

Abstract

Recently, heavily nitrided NO oxynitride has been proposed as an alternative to pure oxide in order to realize high drivability and suppress a large gate leakage current (Fujiwara et al, Digest of IEDM 2000, pp. 227-30, 2000). However, in general, oxynitride has higher interface state density than that of pure oxide, and brings low frequency noise (or 1/f noise) degradation (Kimijima et al., 1999). Thus, analog characteristics under such aggressive doping conditions should be observed carefully for realization of high performance mixed analog and digital LSIs. In this paper, we report analysis of the 1/f noise degradation due to heavily nitrided NO oxynitrides and predict the interface state density value to satisfy 1999 ITRS Roadmap requirements. Additionally, a buried channel type MOSFET is proposed for suppression of the 1/f noise and f/sub T/ degradation.

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重氮化一氧化氮氧化物CMOS模拟特性的研究

最近，重氮化一氧化氮氧化物被提出作为纯氧化物的替代品，以实现高驱动性和抑制大栅极泄漏电流(Fujiwara等人，文摘IEDM 2000, pp. 227- 30,2000)。但总体而言，氮化氧具有比纯氧化物更高的界面态密度，并带来低频噪声(或1/f噪声)退化(Kimijima et al.， 1999)。因此，为了实现高性能的模拟和数字混合lsi，需要仔细观察这种侵略性掺杂条件下的模拟特性。在本文中，我们报告了重氮化一氧化氮氧化物引起的1/f噪声退化的分析，并预测了界面态密度值，以满足1999年ITRS路线图的要求。此外，提出了一种埋沟道型MOSFET，用于抑制1/f噪声和f/sub T/退化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184)

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