Time-resolved luminescence spectrum and radiation recombination progress in surface and core of porous silicon

B. Huy, Phi Hoa Binb, P. Hội, D. Cao, L. Quan
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Abstract

Time-resolved luminescence spectra (TRLS) of porous silicon (PS) in the delay time range of 10/sup -9/-10/sup -6/ s were investigated. The luminescence spectra include the blue zone with decay time of the order of nanoseconds and the red zone with longer decay time. Recombination mechanisms in the core and in the surface states were used to explain this experimental result. The existence of discrete peaks in the blue zone shows that the luminescence is due to nano-scale crystals.
多孔硅表面和核心的时间分辨发光光谱及辐射复合研究进展
研究了多孔硅(PS)在延迟时间10/sup -9/-10/sup -6/ s范围内的时间分辨发光光谱(TRLS)。发光光谱包括衰减时间为纳秒数量级的蓝色区和衰减时间较长的红色区。用核态和表面态的复合机制来解释这一实验结果。蓝区离散峰的存在表明发光是由纳米级晶体引起的。
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