The world's first high voltage GaN-on-diamond power devices

Abstract

This paper reports the fabrication method and electrical characterization results of the first-ever demonstrated high voltage AlGaN/GaN HEMTs on CVD diamond substrate. Fabricated circular GaN-on-Diamond HEMTs with gate-to-drain drift length of 17 μm and source field plate length of 3 μm show an off-state breakdown voltage of ~ 1100V. Temperature characterization of Capacitance voltage characteristics provides insight on the temperature dependence of VTH and 2DEG sheet carrier concentration in the fabricated devices.