A trap generation statistical model in closed-form for intrinsic breakdown of ultra-thin oxides

Abstract

A trap generation statistical model with the trap radius r and the trap filling fraction p both as parameters has been formulated in closed-form for intrinsic breakdown of ultra-thin oxides. Reproduction of experimental Q/sub BD/ distributions for different oxide thicknesses and areas has been achieved through the model. The extracted values of r and p are quite comparable with the literature ones. The model itself has successfully predicted the ultimate thickness limit for breakdown. Also presented is the Emission Spectroscopy (EMMI) of breakdown sites as well as Atomic Force Microscope (AFM) images of silicon and oxide surfaces, to validate the assumptions used in model.