170-GHz transceiver with on-chip antennas in SiGe technology

Abstract

A single-chip transceiver with on-die transmit and receive antennas, Rx and Tx amplifiers, 165-GHz oscillator and static frequency divider is reported in a SiGe HBT process with fT/fMAX of 270 GHz/340 GHz. This marks the highest frequency transceiver in silicon and the highest level of functional integration above 100 GHz in any semiconductor technology. The downconversion gain peaks at -5 dB and the transmit power is -5 dBm when measured at the transceiver pads. Both degrade by approximately 25 dB when measured above the antennas of the transceiver with on-die antennas. The experimental performance of dipole (with and without floating metal strips) and patch antennas is also investigated. The measured 15-dB gain of a standalone amplifier is centered at 170 GHz and remains higher than 10 dB from 160 GHz to 180 GHz while the saturated output power is 0 dBm at 165 GHz.