Performance Evaluation of Double Gate Pentacene Organic FET Using Simulation Study

Abstract

Comparative analysis between single gate organic FET and double gate is presented in terms of performance parameters such as ON-OFF current ratio, threshold voltage VTh, mobility µ, transconductance gm, output conductance gds using TCAD device simulator. Effect of structural parameters and bias voltages on drain current is analyzed. Use of High-k dielectric and double gate configuration shows remarkable improvement in terms of higher drain current and performance parameters than single gate organic FET.