120nm AlSb/InAs HEMT without gate recess: 290GHz fT and 335GHz fmax

Abstract

In this paper, we report on high frequency performances of AlSb/InAs high electron mobility transistor (HEMT) with 120nm gate length at room temperature. The excellent combined cut-off frequencies fT/fmax of 290/335 GHz simultaneously obtained at drain bias of 0.36V is another demonstration of the ability of AlSb/InAs HEMT for high frequency operation with low-power consumption. Small-signal equivalent circuit parameters have been extracted.