Efficient Fibre-chip Coupling using Ion-milled Alignment Grooves on Lithium Niobate at λ = 1.3μm.

A. Nutt, J. Bristow, A. Mcdonach, P. Laybourn
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Abstract

To make realistic use of the vast range of integrated optic devices, both active and passive, on lithium niobate, as in other substrates, it is necessary to produce efficient, reliable and repeatable fibre to waveguide couplers. High efficiency can be achieved (Ref.1) by micro manipulating the fibre butted to the waveguide, while also taking steps to reduce modal field mismatch. Manipulating the fibre is however a complex and time-consuming operating which does not easily lend itself to multi-port devices. The use of silicon 'V' grooves (Ref.2) can aid fibre alignment and reduce the complexity of the operation while maintaining a high coupling efficiency. However, the component utilises two technologies and the alignment of multi-port devices face down onto the silicon surface poses problems. Problems may also arise from silicon and lithium niobate having different thermal expansion coefficients.
λ = 1.3μm铌酸锂离子铣削对准槽的高效光纤芯片耦合。
为了在铌酸锂和其他衬底上实际使用广泛的集成光学器件,包括有源和无源,有必要生产高效、可靠和可重复的光纤波导耦合器。通过微操纵与波导对接的光纤可以实现高效率(参考文献1),同时也采取措施减少模态场不匹配。然而,操作光纤是一项复杂且耗时的操作,不容易为多端口设备提供支持。使用硅“V”型凹槽(参考文献2)可以帮助光纤对准并降低操作的复杂性,同时保持高耦合效率。然而,该组件采用了两种技术,多端口设备朝下对准硅表面会带来问题。由于硅和铌酸锂具有不同的热膨胀系数,也可能产生问题。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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