D. Lamb, P. Roberts, R. Belt, D. Bostick, H. Stevens, S. Pai, D. Burbank
{"title":"A sub-nanosecond ISL technology demonstrated in a 400 mil × 400 mil VLSI chip","authors":"D. Lamb, P. Roberts, R. Belt, D. Bostick, H. Stevens, S. Pai, D. Burbank","doi":"10.1109/IEDM.1980.189971","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"185 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1980 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1980.189971","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}