Ning Li, Takeshi Inoue, T. Hirano, Jian Pang, Rui Wu, K. Okada, Hitoshi Sakane, A. Matsuzawa
{"title":"Substrate noise isolation improvement by helium-3 ion irradiation technique in a triple-well CMOS process","authors":"Ning Li, Takeshi Inoue, T. Hirano, Jian Pang, Rui Wu, K. Okada, Hitoshi Sakane, A. Matsuzawa","doi":"10.1109/ESSDERC.2015.7324762","DOIUrl":null,"url":null,"abstract":"Helium-3 ion irradiation technique is proposed to improve silicon substrate noise isolation by creating a local semi-insulated region with a resistivity over 1kΩ-cm in low-resistive silicon substrate. Noise isolation is improved about 10dB at 2GHz after helium-3 ion irradiation in a 180-nm CMOS process. A 90% noise reduction has been achieved in the measurement results for test structures with guard rings. The noise isolation can be kept even after annealing at 200°C for 1 hour.","PeriodicalId":332857,"journal":{"name":"2015 45th European Solid State Device Research Conference (ESSDERC)","volume":"245 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 45th European Solid State Device Research Conference (ESSDERC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2015.7324762","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Helium-3 ion irradiation technique is proposed to improve silicon substrate noise isolation by creating a local semi-insulated region with a resistivity over 1kΩ-cm in low-resistive silicon substrate. Noise isolation is improved about 10dB at 2GHz after helium-3 ion irradiation in a 180-nm CMOS process. A 90% noise reduction has been achieved in the measurement results for test structures with guard rings. The noise isolation can be kept even after annealing at 200°C for 1 hour.