Device design methodology and reliability strategy for deep sub-micron technology [DRAMs]

R. Divakaruni, B. El-Kareh, W. Tonti
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引用次数: 1

Abstract

This tutorial paper discusses device and process optimization techniques that may be employed in the design of current state-of-the-art bulk silicon DRAM technology. MOSFET performance and reliability issues are contrasted.
深亚微米技术[dram]器件设计方法与可靠性策略
本教程讨论了器件和工艺优化技术,可用于当前最先进的体硅DRAM技术的设计。对比了MOSFET的性能和可靠性问题。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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