{"title":"Device design methodology and reliability strategy for deep sub-micron technology [DRAMs]","authors":"R. Divakaruni, B. El-Kareh, W. Tonti","doi":"10.1109/IRWS.1997.660315","DOIUrl":null,"url":null,"abstract":"This tutorial paper discusses device and process optimization techniques that may be employed in the design of current state-of-the-art bulk silicon DRAM technology. MOSFET performance and reliability issues are contrasted.","PeriodicalId":193522,"journal":{"name":"1997 IEEE International Integrated Reliability Workshop Final Report (Cat. No.97TH8319)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 IEEE International Integrated Reliability Workshop Final Report (Cat. No.97TH8319)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRWS.1997.660315","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This tutorial paper discusses device and process optimization techniques that may be employed in the design of current state-of-the-art bulk silicon DRAM technology. MOSFET performance and reliability issues are contrasted.