Pixel Design of Ultra-high Speed CMOS Image Sensor

Abstract

Ultra-high-speed (UHS) image sensors with time resolution from nano-second to micro-second are widely applied to research phenomena such as electric discharge, explosives, materials fracture. To realize UHS CMOS pixels with high time resolution and imaging quality, the photoelectrons in large pinned photo diode (PPD) must be transferred at very high velocity. This paper firstly presents an overview of two types of UHS CMOS pixels with multiple floating diffusion (MFD) or single floating diffusion (SFD). Then, two design examples with SFD at the edge/center of the photo-diode (PD) are also introduced to show the design of UHS CMOS pixel with large PPD.