{"title":"Preparation of surface photovoltage VOC detector","authors":"B. Yuliarto, Nugraha, H. Zhou","doi":"10.1109/ICICI-BME.2009.5417234","DOIUrl":null,"url":null,"abstract":"We succesfully prepared the surface photovoltage sensor system using several types of modified mesoporous silica as a sensitive materials. The sensitive materials were fabricated using self-ordered and structure-controlled modified mesoporous thin films, which is synthesized by a molecule surfactant method using spin coating. The surface photo voltage sensor was characterized for the dangerous gas including different kind of VOC gas. The gas sensor, which is based on a metal-insulator-semiconductor (MIS) strcuture, showed high sensitivity and fast response at room temperature.","PeriodicalId":191194,"journal":{"name":"International Conference on Instrumentation, Communication, Information Technology, and Biomedical Engineering 2009","volume":"49 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Instrumentation, Communication, Information Technology, and Biomedical Engineering 2009","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICICI-BME.2009.5417234","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We succesfully prepared the surface photovoltage sensor system using several types of modified mesoporous silica as a sensitive materials. The sensitive materials were fabricated using self-ordered and structure-controlled modified mesoporous thin films, which is synthesized by a molecule surfactant method using spin coating. The surface photo voltage sensor was characterized for the dangerous gas including different kind of VOC gas. The gas sensor, which is based on a metal-insulator-semiconductor (MIS) strcuture, showed high sensitivity and fast response at room temperature.