The Role of Measurement Uncertainty in Achieving First-Pass Design Success

Abstract

We investigate the role of measurement uncertainty in achieving first-pass design success at microwave frequencies. We develop a model for state-of-the-art 250 nm heterojunction bipolar transistors, and demonstrate the propagation of correlated measurement uncertainties through the model-extraction and verification process. We then investigate the accuracy of the extracted model parameters and the role of measurement uncertainty in gauging the ability of the model to predict the behavior of the transistor in large-signal operating states.