The new methodology of contact process window vericification

Abstract

Generally CD (critical dimension) measurement is an important role for verify the FEM (Focus Exposure Matrix) process window. However, the generally CD measurement is rough due to only measure few site in wafer. The results cannot get the high accuracy information for verification the FEM process window and waste a lot of FEM process time. In this paper, we have demonstrate a new methodology that can get rapidly and precisely verify FEM process window by advanced CD measurement go through high resolution images and contour extraction.