Straightforward fabrication of low schottky barrier single-walled carbon nanotube transistors by direct growth method

Abstract

Single-walled carbon nanotubes field-effect transistors was fabricated by means of direct growth method. The structural of as grown CNTs directly from electrodes and the transport characteristics of the FET have been studied. SWNTs were successfully bridged the FET electrodes. For the FET device configuration in this study, the field-effectiveness can be related as Vgs:Vds = 10:−1. The enhancement of current can be attributed to the reduction of activation energy. Clear correlation between the effects of bias voltage, gate voltage and activation energy has been observed. Device operation was consistent with operation of Schottky-type FET with small Ea value of 170 meV. Ideal Schottky barrier formation for electron injection was realized in this device configuration. This study contributed to a straightforward fabrication of CNT-FET with high performance without the need of pre-deposition or post-deposition of CNTs in the FET channel.