A. Cabrini, G. Sandre, L. Gobbi, P. Malcovati, M. Pasotti, M. Poles, F. Rigoni, G. Torelli
{"title":"A 1 V, 26 /spl mu/W extended temperature range band-gap reference in 130-nm CMOS technology","authors":"A. Cabrini, G. Sandre, L. Gobbi, P. Malcovati, M. Pasotti, M. Poles, F. Rigoni, G. Torelli","doi":"10.1109/ESSCIR.2005.1541670","DOIUrl":null,"url":null,"abstract":"This paper presents a fully CMOS band-gap reference for extended temperature range (from -50 /spl deg/C to 160 /spl deg/C) applications. The proposed solution provides an output voltage of 798 mV with a power supply as low as 1 V. The measured output voltage variations as a function of temperature (-50 /spl deg/C to 160 /spl deg/C) and power supply (1 V to 2 V) are 6.64 ppm//spl deg/C and 248 ppm/V, respectively. High accuracy is achieved by minimizing the operational amplifier offset. Power consumption is approximately equal to 26 /spl mu/W (supply voltage = 1 V). Silicon area is 0.02 mm/sup 2/.","PeriodicalId":239980,"journal":{"name":"Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005.","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIR.2005.1541670","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11
Abstract
This paper presents a fully CMOS band-gap reference for extended temperature range (from -50 /spl deg/C to 160 /spl deg/C) applications. The proposed solution provides an output voltage of 798 mV with a power supply as low as 1 V. The measured output voltage variations as a function of temperature (-50 /spl deg/C to 160 /spl deg/C) and power supply (1 V to 2 V) are 6.64 ppm//spl deg/C and 248 ppm/V, respectively. High accuracy is achieved by minimizing the operational amplifier offset. Power consumption is approximately equal to 26 /spl mu/W (supply voltage = 1 V). Silicon area is 0.02 mm/sup 2/.