ELECTRICAL AND PHOTOELECTRIC PROPERTIES OF SCHOTTKY DIODES GRAPHITE/n-Si PREPARED BY THE PENCIL-ON-SEMICONDUCTOR METHOD

Abstract

This paper presents the results of studies of the electrical properties photosensitive Schottky diodes graphite/n-Si prepared by the transfer of dry drawn graphite films onto single crystal n-Si. Forward and reverse I-V characteristics of Schottky diodes graphite/n-Si were measured at various temperatures, as well as with light intensity Popt= 80 mW/cm2. The dominating current-transport mechanisms through the heterojunctions was established: at forward bias, it is well described by the tunneling-recombination models via surface states at the graphite/n-Si interface; at reverse bias, was determined to be the small current flows through the shunt resistance. It was found that the reverse current Ilight increases by more than an order of magnitude in comparison with its value in the dark Idark due to the separation of photogenerated electron-hole pairs under illumination with white light with an intensity Popt = 80 mW/cm2. From the above, it can be conclude that the fabricated Schottky diodes can be use as a photosensitive device.