A 0.52-V 5.7-GHz low noise sub-sampling PLL with dynamic threshold MOSFET

S. Ikeda, Sang-yeop Lee, Hiroyuki Ito, N. Ishihara, K. Masu
{"title":"A 0.52-V 5.7-GHz low noise sub-sampling PLL with dynamic threshold MOSFET","authors":"S. Ikeda, Sang-yeop Lee, Hiroyuki Ito, N. Ishihara, K. Masu","doi":"10.1109/ASSCC.2014.7008936","DOIUrl":null,"url":null,"abstract":"This paper proposes a low voltage sub-sampling PLL with dynamic threshold MOSFET (DTMOS). DTMOS switch can achieve higher on/off ratio, which prevents signal attenuation and leakage of a sub-sampling phase detector (SSPD) under low supply voltage. The proposed SSPD also employs double-balanced structure to suppress feedthrough in hold mode. DTMOS switches are also applied to a sub-sampling charge pump to reduce undesirable current leak. The proposed PLL was fabricated in a 65nm CMOS. Under the power supply of 0.52V, it shows a in-band phase noise of -98 dBc/Hz at 410 kHz, and the total power consumption of 1.72 mW at 5.71 GHz including frequency-locked loop.","PeriodicalId":161031,"journal":{"name":"2014 IEEE Asian Solid-State Circuits Conference (A-SSCC)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE Asian Solid-State Circuits Conference (A-SSCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASSCC.2014.7008936","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8

Abstract

This paper proposes a low voltage sub-sampling PLL with dynamic threshold MOSFET (DTMOS). DTMOS switch can achieve higher on/off ratio, which prevents signal attenuation and leakage of a sub-sampling phase detector (SSPD) under low supply voltage. The proposed SSPD also employs double-balanced structure to suppress feedthrough in hold mode. DTMOS switches are also applied to a sub-sampling charge pump to reduce undesirable current leak. The proposed PLL was fabricated in a 65nm CMOS. Under the power supply of 0.52V, it shows a in-band phase noise of -98 dBc/Hz at 410 kHz, and the total power consumption of 1.72 mW at 5.71 GHz including frequency-locked loop.
基于动态阈值MOSFET的0.52 v 5.7 ghz低噪声分采样锁相环
提出了一种采用动态阈值MOSFET (DTMOS)的低压分采样锁相环。DTMOS开关可以实现更高的通/关比,防止了低电源电压下子采样鉴相器(SSPD)的信号衰减和泄漏。SSPD还采用双平衡结构抑制保持模式下的馈通。DTMOS开关也应用于子采样电荷泵,以减少不希望的电流泄漏。所提出的锁相环是在65nm CMOS上制造的。在0.52V电源下,410 kHz时的带内相位噪声为-98 dBc/Hz,含锁频环的5.71 GHz时的总功耗为1.72 mW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信