Gate oxide TDDB reliability under various stress in sub-16nm FinFET technology

Abstract

In this work, TDDB characteristics in sub-16nm FinFET technology are investigated. The MTTF of N/PMOSFET under AC stress increases about one order of magnitude compared with the DC results under same voltage and the AC margin of N/PMOSFET are equal to 85mV and 89mV based on the fitting voltage coefficient. The TDDB characteristics under off-state stress are studied, the results indicate that the MTTF of NMOSFET in on-state and PMOSFET in off-state is lower since the majority carriers in the channel. Moreover, the dependence of on-state TDDB on Vds is studied and the results indicate that the MTTF increases first and then decreases with the increment of Vds.