P. Maillard, M. Hart, Jeff Barton, Jue Arver, Christina Smith
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引用次数: 12
Abstract
This paper examines the single-event effect response of the Xilinx 16nm FinFET XCZU9EG Zynq® MPSoC irradiated with neutrons, 64 MeV protons and thermal neutrons sources. A 16nm FPGA-like test chip was also built for alpha foil testing. Results for single-event upsets on configuration RAM (CRAM) cells and block RAM (bRAM) cells are provided for the programmable logic. In addition, the 1st· Xilinx 16nm FinFET processor (PS) SEE results are also presented.