{"title":"MOSFET Modeling for VLSI Simulation - Theory and Practice","authors":"N. Arora","doi":"10.1142/6157","DOIUrl":null,"url":null,"abstract":"Overview Review of Basic Semiconductor and pn Junction Theory MOS Transistor Structure and Operation MOS Capacitor Threshold Voltage MOSFET DC Model Dynamic Model Modeling Hot-Carrier Effects Data Acquisition and Model Parameter Measurements Model Parameter Extraction Using Optimization Method SPICE Diode and MOSFET Models and Their Parameters Statistical Modeling and Worst-Case Design Parameters.","PeriodicalId":256342,"journal":{"name":"International Series on Advances in Solid State Electronics and Technology","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"191","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Series on Advances in Solid State Electronics and Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1142/6157","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 191
Abstract
Overview Review of Basic Semiconductor and pn Junction Theory MOS Transistor Structure and Operation MOS Capacitor Threshold Voltage MOSFET DC Model Dynamic Model Modeling Hot-Carrier Effects Data Acquisition and Model Parameter Measurements Model Parameter Extraction Using Optimization Method SPICE Diode and MOSFET Models and Their Parameters Statistical Modeling and Worst-Case Design Parameters.