A multiple-valued ferroelectric content-addressable memory

A. Sheikholeslami, P. Gulak, T. Hanyu
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引用次数: 14

Abstract

A novel architecture for a multiple-valued ferroelectric content-addressable memory (FCAM) is proposed. An FCAM employs ferroelectric capacitors as storage elements to provide a nonvolatile content-addressable memory. A 2-bit search operation is performed by a simultaneous access to a 4-level polarization, hence reducing the total number of search operations to half. Four FCAM structures are discussed in terms of their speed, area, and implementation feasibility.
一种多值铁电内容可寻址存储器
提出了一种新的多值铁电内容可寻址存储器(FCAM)结构。FCAM采用铁电电容器作为存储元件来提供非易失性内容可寻址存储器。通过同时访问4级极化来执行2位搜索操作,从而将搜索操作的总数减少到一半。讨论了四种FCAM结构的速度、面积和实现可行性。
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