{"title":"A multiple-valued ferroelectric content-addressable memory","authors":"A. Sheikholeslami, P. Gulak, T. Hanyu","doi":"10.1109/ISMVL.1996.508339","DOIUrl":null,"url":null,"abstract":"A novel architecture for a multiple-valued ferroelectric content-addressable memory (FCAM) is proposed. An FCAM employs ferroelectric capacitors as storage elements to provide a nonvolatile content-addressable memory. A 2-bit search operation is performed by a simultaneous access to a 4-level polarization, hence reducing the total number of search operations to half. Four FCAM structures are discussed in terms of their speed, area, and implementation feasibility.","PeriodicalId":403347,"journal":{"name":"Proceedings of 26th IEEE International Symposium on Multiple-Valued Logic (ISMVL'96)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-01-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 26th IEEE International Symposium on Multiple-Valued Logic (ISMVL'96)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISMVL.1996.508339","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 14
Abstract
A novel architecture for a multiple-valued ferroelectric content-addressable memory (FCAM) is proposed. An FCAM employs ferroelectric capacitors as storage elements to provide a nonvolatile content-addressable memory. A 2-bit search operation is performed by a simultaneous access to a 4-level polarization, hence reducing the total number of search operations to half. Four FCAM structures are discussed in terms of their speed, area, and implementation feasibility.