Molecular Beam Epitaxial GaAs/Al/sub 0.2/Ga/sub 0.8/As Heterojunction Bipolar Transistor on

[1991] 49th Annual Device Research Conference Digest Pub Date : 1991-06-17 DOI:10.1109/DRC.1991.664722

W. Li, P. Bhattacharya

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Abstract

Summary form only given. The authors have investigated the characteristics and reliability of p-doping in GaAs with Si by MBE and have realized high-gain n-p-n GaAs/AlGaAs heterojunction bipolar transistors (HBTs) on

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分子束外延GaAs/Al/sub 0.2/Ga/sub 0.8/As异质结双极晶体管

只提供摘要形式。作者研究了用MBE在GaAs中掺杂Si的特性和可靠性，并实现了高增益n-p-n GaAs/AlGaAs异质结双极晶体管(HBTs)

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

[1991] 49th Annual Device Research Conference Digest

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